Quantifying the oxidation of AlN using electron energy loss spectroscopy

The successful exploitation of selective oxidation in III-V semiconducting devices depends on the ability to control the nature and extent of the oxidation process over distances of the order of 10 nm. This paper reports an analytical method capable of measuring the nature and extent of the oxidation process in AlN. Analytical electron microscopy and, in particular the near-edge fine structure present on characteristic edges in electron energy loss spectroscopy, is used to measure the extent of surface oxidation of AlN powder in air at room temperature. The oxidation was found to result in the formation of a surface oxidation layer of amorphous Al2O3 and the retention of some of the N produced, most likely in the form of N-2 gas. Application of the technique to nanoscale analysis of semiconductors is considered.