Raman analysis of wurtzite silicon islands in silicon oxide deposited in N2O-SiH4 plasma process

被引：7

作者：

Bandet, J

Despax, B

Caumont, M

Date, L

机构：

[1] CNRS, Phys Solides Lab, ESA 5003, F-31062 Toulouse, France

[2] CNRS, Lab Genie Elect, ESA 5003, F-31062 Toulouse, France

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 2B期

关键词：

Raman scattering; wurtzite silicon; crystallites; RF PECVD deposition;

D O I：

10.1143/JJAP.39.L141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the deposition of stable wurtzite Si islands in a silicon oxide deposition process with N2O-Silane plasma ([SiH4] < 2%). They were brought to the fore by Raman spectroscopy using a high resolution microprobe. By means of group theory, we were able to discriminate among these clusters, wurtzite silicon, diamond silicon and mixed crystals. We showed experimentally that they were the result of dust formation in the N2O-SiH4 radiofrequency discharge.

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页码：L141 / L142

页数：2

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