Optical properties of AlN and GaN under pressure: An ab-initio study

被引：10

作者：

Laskowski, Robert

Christensen, Niels Egede

机构：

[1] Vienna Univ Technol, Inst Mat Chem, A-1060 Vienna, Austria

[2] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, Denmark

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2007年 / 244卷 / 01期

关键词：

D O I：

10.1002/pssb.200672501

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Theoretically calculated dielectric functions are presented for wurtzite and high pressure rocksalt phases of AlN and GaN. The spectra are calculated in a wide range of photon energies as well as in a a very narrow window near the band gap. The binding energies of excitons have been estimated. For the wurtzite phases they are: 0.105 and 0.033 eV for AlN and GaN, and for the high pressure rocksalt phases they are: 0.11 and 0.061 eV. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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页码：17 / 23

页数：7

相关论文

共 24 条

[1] QUANTUM THEORY OF DIELECTRIC CONSTANT IN REAL SOLIDS [J].

ADLER, SL .

PHYSICAL REVIEW, 1962, 126 (02) :413-+

[2] Ab initio calculation of excitonic effects in the optical spectra of semiconductors [J].

Albrecht, S ;

Reining, L ;

Del Sole, R ;

Onida, G .

PHYSICAL REVIEW LETTERS, 1998, 80 (20) :4510-4513

[3] Optical absorption of insulators and the electron-hole interaction: An ab initio calculation [J].

Benedict, LX ;

Shirley, EL ;

Bohn, RB .

PHYSICAL REVIEW LETTERS, 1998, 80 (20) :4514-4517

[4] Dielectric function of wurtizite GaN and AlN thin films [J].

Benedict, LX ;

Wethkamp, T ;

Wilmers, K ;

Cobet, C ;

Esser, N ;

Shirley, EL ;

Richter, W ;

Cardona, M .

SOLID STATE COMMUNICATIONS, 1999, 112 (03) :129-133

[5]

Blaha P, 2001, WIEN2K AUGMENTED PLA

[6] OPTICAL AND STRUCTURAL-PROPERTIES OF III-V NITRIDES UNDER PRESSURE [J].

CHRISTENSEN, NE ;

GORCZYCA, I .

PHYSICAL REVIEW B, 1994, 50 (07) :4397-4415

[7] INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J].

ELLIOTT, RJ .

PHYSICAL REVIEW, 1957, 108 (06) :1384-1389

[8] Lowest optical excitations in molecular crystals: Bound excitons versus free electron-hole pairs in anthracene [J].

Hummer, K ;

Puschnig, P ;

Ambrosch-Draxl, C .

PHYSICAL REVIEW LETTERS, 2004, 92 (14) :147402-1

[9] ELECTRON CORRELATION IN SEMICONDUCTORS AND INSULATORS - BAND-GAPS AND QUASI-PARTICLE ENERGIES [J].

HYBERTSEN, MS ;

LOUIE, SG .

PHYSICAL REVIEW B, 1986, 34 (08) :5390-5413

[10] Near-band-edge photoluminescence of wurtzite-type AlN [J].

Kuokstis, E ;

Zhang, J ;

Fareed, Q ;

Yang, JW ;

Simin, G ;

Khan, MA ;

Gaska, R ;

Shur, M ;

Rojo, C ;

Schowalter, L .

APPLIED PHYSICS LETTERS, 2002, 81 (15) :2755-2757