Grazing incidence X-ray studies of twist-bonded Si/Si and Si/SiO2 interfaces

被引：8

作者：

Buttard, D

Eymery, J

Rieutord, F

Fournel, F

Lübbert, D

Baumbach, T

Moriceau, H

机构：

[1] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble 9, France

[2] Fraunhofer Inst Zerstorungsfreie Prufverfahren, D-01326 Dresden, Germany

[3] CEA Grenoble, LETI, Dept Microtechnol, F-38054 Grenoble 9, France

来源：

PHYSICA B | 2000年 / 283卷 / 1-3期

关键词：

silicon; wafer bonding; grazing incidence diffraction; X-ray reflectivity;

D O I：

10.1016/S0921-4526(99)01900-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Twist-bonded Si/Si (0 0 1) and Si/SiO2 interfaces have been investigated by grazing incidence X-ray scattering methods. For Si/Si (0 0 1) bonding, conventional X-ray reflectivity reveals the good quality of the interfaces in terms of flatness and roughness. in-plane grazing incidence diffraction measurements around the (2 2 0) reflection show satellite peaks close to the substrate and the layer diffraction peaks. These sharp satellites are produced by a periodic displacement resulting from a very regular buried dislocation network. The Si/SiO2 bonding has been studied with X-ray reflectivity within a transmission geometry. The analysis of the data shows the high quality of both bonded Si/SiO2 and thermal oxide SiO2/Si interfaces. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：103 / 107

页数：5

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