UV irradiation effect on sol-gel indium tin oxide nanopatterns replicated by room-temperature nanoimprint

被引：6

作者：

Kang, Yuji ^{[1
,2
]}

Okada, Makoto ^{[1
,2
,3
]}

Nakamatsu, Ken-Ichiro ^{[1
,2
,3
]}

Kanda, Kazuhiro ^{[1
,2
]}

Haruyama, Yuichi ^{[1
,2
]}

Matsui, Shinji ^{[1
,2
]}

机构：

[1] Univ Hyogo, Grad Sch Sci, LASTI, Ako, Hyogo 6781205, Japan

[2] JST CREST, Chiyoda Ku, Tokyo 1020075, Japan

[3] JSPS, Chiyoda Ku, Tokyo 1028471, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 06期

关键词：

annealing; Fourier transform spectra; indium compounds; infrared spectra; nanolithography; nanostructured materials; semiconductor thin films; soft lithography; sol-gel processing; spin coating; ultraviolet radiation effects; IMPRINT LITHOGRAPHY;

D O I：

10.1116/1.3243167

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];

摘要：

The authors report the first room-temperature nanoimprint lithography (RT-NIL) process using sol-gel indium tin oxide (ITO) as a replicated material. The spin-coated ITO film has to be annealed over 600 degrees C to obtain a low resistivity. The spin-coated ITO film can be delineated by RT-NIL, but the patterns disappear after annealing at 200 degrees C. To overcome the above problem, they examined UV irradiation effects on a spin-coated ITO film. As a result, they found that the ITO patterns imprinted by RT-NIL stayed the same after being annealed at 600 degrees C for 1 h due to 254 nm UV irradiation before annealing.

引用

页码：2805 / 2809

页数：5

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