Nanometer-scale fabrication and data storage on charge transfer complex TEA(TCNQ)2 single crystal

被引:2
作者
Bao, XX [1 ]
Chen, HF [1 ]
Liu, ZF [1 ]
机构
[1] Peking Univ, Coll Chem & Mol Engn, Ctr Nanoscale Sci & Technol, Beijing 100871, Peoples R China
来源
MICRO- AND NANO-PHOTONIC MATERIALS AND DEVICES | 2000年 / 3937卷
关键词
charge transfer complex; data storage; gasificable decomposition; STM; Raman Spectroscopy; mass spectroscopy;
D O I
10.1117/12.382808
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanometer-scale holes and words were reproducibly created on a typical organic charge transfer compound, Triethylammonium Bis-7,7,8,8-tetracyanoquinodimethanide (TEA(TCNQ)(2)) single crystal, using scanning tunneling microscope in ambient conditions by applying a pulse voltage across the tunneling gap, The decomposition products of TEA(TCNQ)(2) single crystal were investigated with mass spectroscopy by applying a pulse to the crystal in a vacuum tube. TEA was the sole product being detected. A micro-Raman Spectroscopy was used to fabricate and characterize the sample using a He-Ne laser. A dots array was written by a focused beam and in situ Raman spectra showed the sample was decomposited. The most possible mechanism of holes formation appears to be TEA(TCNQ)(2) decomposition and TEA evaporation by heating effect of STM current. Comparing data storage in TEA(TCNQ)(2) single crystal with a market-sell CD-R disk, the writing threshold value of TEA(TCNQ)(2) is much smaller that of the CD-R disk. This kind of organic conductor may be a promising material for the STM-based high density storage and popular optical storage techniques.
引用
收藏
页码:172 / 179
页数:8
相关论文
共 19 条
[1]   Local, nonvolatile electronic writing of epitaxial Pb(Zr0.52Ti0.48)O-3/SrRuO3 heterostructures [J].
Ahn, CH ;
Tybell, T ;
Antognazza, L ;
Char, K ;
Hammond, RH ;
Beasley, MR ;
Fischer, O ;
Triscone, JM .
SCIENCE, 1997, 276 (5315) :1100-1103
[2]   STRUCTURAL STUDIES OF TETRATHIAFULVALENE-TETRACYANOQUINODIMETHANE THIN-FILMS BY SCANNING-TUNNELING-MICROSCOPY [J].
ARA, N ;
KAWAZU, A ;
SHIGEKAWA, H ;
YASE, K ;
YOSHIMURA, M .
APPLIED PHYSICS LETTERS, 1995, 66 (24) :3278-3280
[3]   AFM-tip-induced and current-induced local oxidation of silicon and metals [J].
Avouris, P ;
Martel, R ;
Hertel, T ;
Sandstrom, R .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1) :S659-S667
[4]   LARGE-SCALE CHARGE STORAGE BY SCANNING CAPACITANCE MICROSCOPY [J].
BARRETT, RC ;
QUATE, CF .
ULTRAMICROSCOPY, 1992, 42 :262-267
[5]   Using a new kind of organic complex system of electrical bistability for ultrahigh density data storage [J].
Gao, HJ ;
Ma, LP ;
Zhang, HX ;
Chen, HY ;
Xue, ZQ ;
Pang, SJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04) :1581-1583
[6]  
Hidaka T, 1996, APPL PHYS LETT, V68, P2358, DOI 10.1063/1.115857
[7]   NANOMETER-SCALE RECORDING ON CHALCOGENIDE FILMS WITH AN ATOMIC-FORCE MICROSCOPE [J].
KADO, H ;
TOHDA, T .
APPLIED PHYSICS LETTERS, 1995, 66 (22) :2961-2962
[8]   Nanometer-scale recording on an organic-complex thin film with a scanning tunneling microscope [J].
Ma, LP ;
Song, YL ;
Gao, HJ ;
Zhao, WB ;
Chen, HY ;
Xue, ZQ ;
Pang, SJ .
APPLIED PHYSICS LETTERS, 1996, 69 (24) :3752-3753
[9]   Data storage with 0.7 nm recording marks on a crystalline organic thin film by a scanning tunneling microscope [J].
Ma, LP ;
Yang, WJ ;
Xue, ZQ ;
Pang, SJ .
APPLIED PHYSICS LETTERS, 1998, 73 (06) :850-852
[10]  
Magonov S. N., 1996, SURFACE ANAL STM AFM