Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers

被引：50

作者：

Kim, Hyoung-Sub ^{[1
]}

Ok, Injo ^{[1
]}

Zhang, Manhong ^{[1
]}

Lee, Tackhwi ^{[1
]}

Zhu, Feng ^{[1
]}

Yu, Lu ^{[1
]}

Lee, Jack C. ^{[1
]}

机构：

[1] Univ Texas, Ctr Microelect Res, Dept Elect & Comp Engn, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 22期

关键词：

15;

D O I：

10.1063/1.2396912

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, the authors present the capacitance-voltage and current-voltage characteristics of TaN/HfO2/n-GaAs metal-oxide-semiconductor capacitors with thin silicon and germanium interfacial passivation layers (IPLs). Physical vapor deposition high-k dielectric films and silicon/germanium IPLs were deposited on GaAs substrate which has been cleaned with HCl and (NH4)(2)S solutions. Equivalent oxide thickness (EOT) of 12.5 angstrom and dielectric leakage current density of 2.0x10(-4) A/cm(2) at parallel to V-G-V-FB parallel to=1 V with low capacitance-voltage frequency dispersion have been obtained. The results indicate that the use of a thin silicon/germanium IPL assists in scaling EOT below 13 angstrom, while improving the quality of the interface. (c) 2006 American Institute of Physics.

引用

页数：3

共 15 条

[1]

Byoung Hun Lee, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P133, DOI 10.1109/IEDM.1999.823863

[2] Aggressively scaled ultrathin undoped HfO2 gate dielectric (EOT<0.7 nm) with TaN gate electrode using engineered interface layer [J].

Choi, C ;

Kang, CY ;

Rhee, SJ ;

Akbar, MS ;

Krishnan, SA ;

Zhang, MH ;

Kim, HS ;

Lee, T ;

Ok, I ;

Zhu, F ;

Lee, JC .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (07) :454-457

[3]

Fountain G. G., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P887, DOI 10.1109/IEDM.1989.74196

[4] INTERFACIAL PROPERTIES OF METAL-INSULATOR-SEMICONDUCTOR CAPACITORS ON GAAS(110) [J].

HUANG, LJ ;

RAJESH, K ;

LAU, WM ;

INGREY, S ;

LANDHEER, D ;

NOEL, JP ;

LU, ZH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03) :792-796

[5] METAL-INSULATOR-SEMICONDUCTOR CAPACITORS ON CLEAVED GAAS(110) [J].

HUANG, LJ ;

LAU, WM ;

INGREY, S ;

LANDHEER, D ;

NOEL, JP .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) :8192-8194

[6] Ultrathin HfO2 (equivalent oxide thickness=1.1 nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation [J].

Kim, Hyoung-Sub ;

Ok, Injo ;

Zhang, Manhong ;

Choi, Changhwan ;

Lee, Tackhwi ;

Zhu, Feng ;

Thareja, Gaurav ;

Yu, Lu ;

Lee, Jack C. .

APPLIED PHYSICS LETTERS, 2006, 88 (25)

[7] Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer -: art. no. 022106 [J].

Koveshnikov, S ;

Tsai, W ;

Ok, I ;

Lee, JC ;

Torkanov, V ;

Yakimov, M ;

Oktyabrsky, S .

APPLIED PHYSICS LETTERS, 2006, 88 (02) :1-3

[8] Metal gate-HfO2 MOS structures on GaAs substrate with and without Si interlayer [J].

Ok, IJ ;

Kim, HS ;

Zhang, MH ;

Kang, CY ;

Rhee, SJ ;

Choi, CW ;

Krishnan, SA ;

Lee, T ;

Zhu, F ;

Thareja, G ;

Lee, JC .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (03) :145-147

[9] Role of Ga2O3 template thickness and gadolinium mole fraction in GdxGa0.4-xO0.6/Ga2O3 gate dielectric stacks on GaAs [J].

Passlack, M ;

Medendorp, N ;

Gregory, R ;

Braddock, D .

APPLIED PHYSICS LETTERS, 2003, 83 (25) :5262-5264

[10]

Passlack M, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P383, DOI 10.1109/IEDM.1995.499220

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