Metal gate-HfO2 MOS structures on GaAs substrate with and without Si interlayer

被引：76

作者：

Ok, IJ ^{[1
]}

Kim, HS ^{[1
]}

Zhang, MH ^{[1
]}

Kang, CY ^{[1
]}

Rhee, SJ ^{[1
]}

Choi, CW ^{[1
]}

Krishnan, SA ^{[1
]}

Lee, T ^{[1
]}

Zhu, F ^{[1
]}

Thareja, G ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78758 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 03期

关键词：

HfO2; frequency dispersion; GaAs; interface control layer; leakage current density; Si;

D O I：

10.1109/LED.2006.870243

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we studied the effects of post-deposition anneal (PDA) time and Si interface control layer (ICL) on the electrical characteristics of the MOS capacitor with high-kappa (HfO2) material on GaAs. Thin equivalent oxide thickness (EOT < 3 nm) with excellent capacitance-voltage (C-V) characteristics has been obtained. The thickness of the Si ICL and PDA time were correlated with C-V characteristics. It was found that high temperature Si ICL deposition and longer PDA time at 600 degrees C improved the C-V shape, leakage current., and especially frequency dispersion (< 5%).

引用

页码：145 / 147

页数：3

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