STUDIES OF GAAS OXIDE INTERFACES WITH AND WITHOUT SI INTERLAYER

[1] LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3136 - 3145

[2] FIRST ANODIC-OXIDE GAAS MOSFETS BASED ON EASY TECHNOLOGICAL PROCESSES [J]. ELECTRONICS LETTERS, 1976, 12 (02) : 53 - 54

[3] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +

[4] GAAS MIS STRUCTURES WITH SIO2 USING A THIN SILICON INTERLAYER [J]. ELECTRONICS LETTERS, 1988, 24 (18) : 1134 - 1135

[5] FOUNTAIN GG, UNPUB 1989 P INT EL, P89

[6] THE ANALYSIS OF COMPLEX SAMPLES BY SPECTROSCOPIC ELLIPSOMETRY [J]. APPLIED SURFACE SCIENCE, 1989, 41-2 : 323 - 328

[7] METAL (100)GAAS INTERFACE - CASE FOR A METAL-INSULATOR-SEMICONDUCTOR-LIKE STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1990, 56 (01) : 69 - 71

[8] APPLICATION OF SPECTROSCOPIC ELLIPSOMETRY TO COMPLEX SAMPLES [J]. APPLIED PHYSICS LETTERS, 1988, 53 (24) : 2426 - 2428

[9] SPECTROSCOPIC AND ELECTRICAL STUDIES OF GAAS METAL-OXIDE SEMICONDUCTOR STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 854 - 860

[10] CONTROL OF COMPOUND SEMICONDUCTOR INSULATOR INTERFACES BY AN ULTRATHIN MOLECULAR-BEAM EPITAXY SI LAYER [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 870 - 878

[1] LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3136 - 3145

[2] FIRST ANODIC-OXIDE GAAS MOSFETS BASED ON EASY TECHNOLOGICAL PROCESSES [J]. ELECTRONICS LETTERS, 1976, 12 (02) : 53 - 54

[3] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +

[4] GAAS MIS STRUCTURES WITH SIO2 USING A THIN SILICON INTERLAYER [J]. ELECTRONICS LETTERS, 1988, 24 (18) : 1134 - 1135

[5] FOUNTAIN GG, UNPUB 1989 P INT EL, P89

[6] THE ANALYSIS OF COMPLEX SAMPLES BY SPECTROSCOPIC ELLIPSOMETRY [J]. APPLIED SURFACE SCIENCE, 1989, 41-2 : 323 - 328

[7] METAL (100)GAAS INTERFACE - CASE FOR A METAL-INSULATOR-SEMICONDUCTOR-LIKE STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1990, 56 (01) : 69 - 71

[8] APPLICATION OF SPECTROSCOPIC ELLIPSOMETRY TO COMPLEX SAMPLES [J]. APPLIED PHYSICS LETTERS, 1988, 53 (24) : 2426 - 2428

[9] SPECTROSCOPIC AND ELECTRICAL STUDIES OF GAAS METAL-OXIDE SEMICONDUCTOR STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 854 - 860

[10] CONTROL OF COMPOUND SEMICONDUCTOR INSULATOR INTERFACES BY AN ULTRATHIN MOLECULAR-BEAM EPITAXY SI LAYER [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 870 - 878