Domain and surface engineering of ferroelectric crystal LiNbO3 for novel devices

被引:4
作者
Terabe, K [1 ]
Liu, X [1 ]
Nakamura, M [1 ]
Takekawa, S [1 ]
Kitamura, K [1 ]
机构
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
关键词
D O I
10.1080/10667857.2004.11753080
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The microscale to nanoscale engineering of the ferroelectric domain structure and surface morphology of a near-stoichiometric LN single crystal was investigated by scanning force microscopy (SFM). Domain structures with tailored patterns were fabricated by controlling the magnitude of the bias voltage, polarity, and treatment time applied to LN samples while scanning them with the conductive cantilever. In addition, surface morphologies with tailored shapes were fabricated on the LN samples by preferentially etching the negatively polarized face in the patterned domains using a 1:2 mixture of HF and HNO3 acids.
引用
收藏
页码:162 / 167
页数:6
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