Interface properties of the Si(100)-SiO2 system formed by rapid thermal oxidation

被引:5
作者
O'Sullivan, BJ
Hurley, PK
Mathewson, A
Das, JH
Daniel, AD
机构
[1] Natl Univ Ireland Univ Coll Cork, Natl Microelect Res Ctr, Cork, Ireland
[2] STEAG RTP Syst, San Jose, CA 95134 USA
关键词
D O I
10.1016/S0026-2714(99)00270-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
this work, the properties of the Si(100)-SiO2 interface are examined directly following wet and dry rapid thermal oxidation (RTO) at 1000-1100 degrees C. The high frequency and quasi-static CV response of the Si(100)-SiO2 system are measured using a mercury probe method. The analysis indicates a high interface state density across the band gap for dry oxidation, with a characteristic peak in the range 0.8-0.9 eV above the valence band edge. These interface state profiles are compared to polysilicon/oxide/Si(100) structures, measured after rapid thermal annealing at 1050 degrees C (where the gate oxide is grown by conventional furnace oxidation). The results show a striking similarity, pointing to a common origin for the interfacial defects. Steam-assisted RTO samples do not reveal these peaks, and the reasons for this are presented. The significance of these new results to thin oxide growth and optimisation by RTO are discussed. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:645 / 648
页数:4
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