Using temperature to tune film roughness: Nonintuitive behavior in a simple system

被引:59
作者
Stoldt, CR [1 ]
Caspersen, KJ
Bartelt, MC
Jenks, CJ
Evans, JW
Thiel, PA
机构
[1] Iowa State Univ, Dept Chem, Ames, IA 50011 USA
[2] Iowa State Univ, Ames Lab, Ames, IA 50011 USA
[3] Sandia Natl Labs, Livermore, CA 94550 USA
关键词
D O I
10.1103/PhysRevLett.85.800
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Ag(100) homoepitaxy constitutes one of the simplest systems in which to study thin-film growth. Yet we find that the roughness variation with temperature is extraordinarily complex. Specifically, as the deposition temperature is reduced from 300 to 50 K, the roughness of 35 monolayer films first increases, then decreases, then increases again. A transition from mound formation to self-affine (semifractal) growth occurs at similar to 135 K. The underlying mechanisms are postulated. An atomistic model incorporating these mechanisms reproduces the experimental data quantitatively.
引用
收藏
页码:800 / 803
页数:4
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