Recombination lifetime of single GAAs/AlGaAs quantum dots

被引：17

作者：

Abbarchi, M. ^{[1
]}

Gurioli, M. ^{[1
]}

Sanguinetti, S. ^{[2
]}

Zamfirescu, M. ^{[1
]}

Vinattieri, A. ^{[1
]}

Koguchi, N. ^{[3
]}

机构：

[1] Univ Florence, LENS, I-50121 Florence, Italy

[2] Univ Milano Bicocca, Dipartimento Sci Mat, Milan, Italy

[3] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11 | 2006年 / 3卷 / 11期

关键词：

D O I：

10.1002/pssc.200671578

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this contribution we experimentally demonstrate, by means of time resolved microphotoluminescence on single GaAs quantum dot (QD), that the lifetime is reduced when decreasing the dot size. The samples are grown by modified droplet epitaxy and are strain free nanocrystals. The analysis of the recombination kinetics as a function of the excitation power allows us to resolve the exciton and biexciton contribution, leading to a clear interpretation of the experimental data. The broad inhomogeneous size distribution of QDs grown by droplet epitaxy (O. Stier et al., Phys. Rev. B 59, 5688 (1999), [4]) is used to investigate QDs of different size in a single sample. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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页码：3860 / +

页数：2

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