Enhancement of hot-electron generation rate in Schottky source metal-oxide-semiconductor field-effect transistors

被引：43

作者：

Uchida, K ^{[1
]}

Matsuzawa, K ^{[1
]}

Koga, J ^{[1
]}

Takagi, S ^{[1
]}

Toriumi, A ^{[1
]}

机构：

[1] Toshiba Corp, Adv LSI Technol Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 26期

关键词：

D O I：

10.1063/1.126845

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Source-side hot-electron generation is experimentally demonstrated in Schottky source metal-oxide-semiconductor field-effect transistors (MOSFETs). An asymmetric n-type MOSFET having a CoSi2 layer in place of one of the n(+) source/drain regions has been fabricated and intensively investigated. When the CoSi2 layer is used as the source, large gate current and negative-differential conductance (NDC) are simultaneously observed, whereas, when the n(+) region is used as the source, both gate current and NDC are not observed. By comparing the device characteristics before and after the NDC observation, it is concluded that the gate current is due to hot electrons generated at the Schottky source side and the NDC is caused by trapped electrons in the oxide. These source-side hot electrons will open up the way to the realization of deca-nanoscaled high-speed devices. (C) 2000 American Institute of Physics. [S0003-6951(00)02426-8].

引用

页码：3992 / 3994

页数：3

共 7 条

[1] A NEW TYPE OF TUNNEL-EFFECT TRANSISTOR EMPLOYING INTERNAL FIELD-EMISSION OF SCHOTTKY-BARRIER JUNCTION [J].

HATTORI, R ;

NAKAE, A ;

SHIRAFUJI, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (10B) :L1467-L1469

[2] Reduction of the floating body effect in SOI MOSFETs by using Schottky source/drain contacts [J].

Nishisaka, M ;

Asano, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B) :1295-1299

[3]

SAITOH W, 1999, 57 ANN DEV RES C DIG, P30

[4] Analysis of the potential distribution in the channel region of a platinum silicided source drain metal oxide semiconductor field effect transistor [J].

Snyder, JP ;

Helms, CR ;

Nishi, Y .

APPLIED PHYSICS LETTERS, 1999, 74 (22) :3407-3409

[5] EXPERIMENTAL INVESTIGATION OF A PTSI SOURCE AND DRAIN FIELD-EMISSION TRANSISTOR [J].

SNYDER, JP ;

HELMS, CR ;

NISHI, Y .

APPLIED PHYSICS LETTERS, 1995, 67 (10) :1420-1422

[6] SILICON FIELD-EFFECT TRANSISTOR BASED ON QUANTUM TUNNELING [J].

TUCKER, JR ;

WANG, CL ;

CARNEY, PS .

APPLIED PHYSICS LETTERS, 1994, 65 (05) :618-620

[7] Sub-40 nm PtSi Schottky source/drain metal-oxide-semiconductor field-effect transistors [J].

Wang, C ;

Snyder, JP ;

Tucker, JR .

APPLIED PHYSICS LETTERS, 1999, 74 (08) :1174-1176

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