Characterizing probe performance in the aberration corrected STEM

被引:18
作者
Batson, P. E. [1 ]
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
aberration correction; quadrupole octupole corrector; scanning transmission electron microscopy;
D O I
10.1016/j.ultramic.2006.04.025
中图分类号
TH742 [显微镜];
学科分类号
摘要
Sub-angstrom ngstrom imaging using the 120 kV IBM STEM is now routine if the probe optics is carefully controlled and fully characterized. However, multislice simulation using at least a frozen phonon approximation is required to understand the Annular Dark Field image contrast. Analysis of silicon dumbbell structures in the [1 10] and [2 1 1] projections illustrate this finding. Using fast image acquisition, atomic movement appears ubiquitous under the electron beam, and may be useful to illuminate atomic level processes. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:1104 / 1114
页数:11
相关论文
共 26 条
[1]   Scanning transmission electron microscopy of gate stacks with HfO2 dielectrics and TiN electrodes -: art. no. 121909 [J].
Agustin, MP ;
Fonseca, LRC ;
Hooker, JC ;
Stemmer, S .
APPLIED PHYSICS LETTERS, 2005, 87 (12) :1-3
[2]   ELECTRON-ENERGY-LOSS SPECTROSCOPY OF SINGLE SILICON NANOCRYSTALS - THE CONDUCTION-BAND [J].
BATSON, PE ;
HEATH, JR .
PHYSICAL REVIEW LETTERS, 1993, 71 (06) :911-914
[4]   Aberration correction results in the IBM STEM instrument [J].
Batson, PE .
ULTRAMICROSCOPY, 2003, 96 (3-4) :239-249
[5]   Sub-angstrom resolution using aberration corrected electron optics [J].
Batson, PE ;
Dellby, N ;
Krivanek, OL .
NATURE, 2002, 418 (6898) :617-620
[6]  
BATSON PE, 1980, SOLID STAETE COMMUN, V37, P477
[7]   Progress in aberration-corrected scanning transmission electron microscopy [J].
Dellby, N ;
Krivanek, OL ;
Nellist, PD ;
Batson, PE ;
Lupini, AR .
JOURNAL OF ELECTRON MICROSCOPY, 2001, 50 (03) :177-185
[8]   Scattering of Å-scale electron probes in silicon [J].
Dwyer, C ;
Etheridge, J .
ULTRAMICROSCOPY, 2003, 96 (3-4) :343-360
[9]  
FERTIG J, 1981, OPTIK, V59, P407
[10]  
Frank MM, 2005, SOLID STATE PHENOMEN, V103-104, P3