Electrical properties of stacked gate dielectric (SiO2/ZrO2) deposited on strained SiGe layers

被引：17

作者：

Chatterjee, S

Samanta, SK

Banerjee, HD

Maiti, CK ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect & ECE, Kharagpur 721302, W Bengal, India

[2] Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India

来源：

THIN SOLID FILMS | 2002年 / 422卷 / 1-2期

关键词：

zirconium tetratert butoxide; chemical vapor deposition; silicon;

D O I：

10.1016/S0040-6090(02)00995-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Stacked silicon and zirconium dioxide (SiO2/ZrO2) films have been deposited on strained-Si(0.91)Geo(0.09) layer at a low temperature using zirconium tetratert butoxide (ZTB) and ZTB/O-2 in a microwave plasma deposition system. Electrical properties of the as-deposited and annealed (in N-2 at 500 degreesC) samples have been measured from the high frequency capacitance-voltage, conductance-voltage and current-voltage characteristics of metal insulator semiconductor capacitor structures fabricated using the stacked dielectrics. The superiority of stacked (SiO2/ZrO2) gate dielectric is shown. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：33 / 38

页数：6

共 26 条

[1] Advances in low temperature processing of silicon nitride based dielectrics and their applications in surface passivation and integrated optical devices [J].