Voltage-Assisted Magnetization Switching in Ultrathin Fe80Co20 Alloy Layers

被引：184

作者：

Shiota, Yoichi ^{[1
]}

Maruyama, Takuto ^{[1
]}

Nozaki, Takayuki ^{[1
,2
]}

Shinjo, Teruya ^{[1
]}

Shiraishi, Masashi ^{[1
]}

Suzuki, Yoshishige ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 06期

关键词：

ELECTRIC-FIELD CONTROL; ROOM-TEMPERATURE; FERROMAGNETISM; MAGNETORESISTANCE; MANIPULATION; MULTILAYERS;

D O I：

10.1143/APEX.2.063001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growing demands for the voltage-driven spintronic applications with ultralow-power consumption have led to new interest in exploring the voltage-induced magnetization switching in ferromagnetic metals. In this study, we observed a large perpendicular magnetic anisotropy change in Au(001)/ultrathin Fe80Co20(001)/MgO(001)/polyimide/indium tin oxide (ITO) junctions, and succeeded in realizing a clear switching of magnetic easy axis between in-plane and perpendicular directions. Furthermore, employing a perpendicularly magnetized film, voltage-induced magnetization switching in the perpendicular direction under the assistance of magnetic fields was demonstrated. These pioneering results may open a new window of electric-field controlled spintronics devices. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

共 23 条

[1] Emission of spin waves by a magnetic multilayer traversed by a current [J].