Fine structure of negatively and positively charged excitons in semiconductor quantum dots: Electron-hole asymmetry

被引：68

作者：

Ediger, M. ^{[1
]}

Bester, G.

Gerardot, B. D.

Badolato, A.

Petroff, P. M.

Karrai, K.

Zunger, A.

Warburton, R. J.

机构：

[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[4] Univ Munich, Ctr Nanosci, D-80539 Munich, Germany

[5] Univ Munich, Dept Phys, D-80539 Munich, Germany

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1103/PhysRevLett.98.036808

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present new understanding of excitonic fine structure in close-to-symmetric InAs/GaAs and InGaAs/GaAs quantum dots. We demonstrate excellent agreement between spectroscopy and many-body pseudopotential theory in the energy splittings, selection rules and polarizations of the optical emissions from doubly charged excitons. We discover a marked difference between the fine structure of the doubly negatively and doubly positively charged excitons. The features in the doubly charged emission spectra are shown to arise mainly from the lack of inversion symmetry in the underlying crystal lattice.

引用

页数：4

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