Phase segregation in AllnP shells on GaAs nanowires

被引：93

作者：

Skold, Niklas

Wagner, Jakob B.

Karlsson, Gunnel

Hernan, Tania

Seifert, Werner

Pistol, Mats-Erik

Samuelson, Lars

机构：

[1] Lund Univ, Solid State Phys Nanometer Struct Consortium, SE-22100 Lund, Sweden

[2] Nanometer Struct Consortium, Polymer & Mat Chem, SE-22100 Lund, Sweden

来源：

NANO LETTERS | 2006年 / 6卷 / 12期

关键词：

OPTICAL-PROPERTIES; CORE-SHELL; GROWTH; HETEROSTRUCTURES; SURFACES; MECHANISMS; WHISKERS;

D O I：

10.1021/nl061692d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have studied morphology and phase segregation of AlInP shells on GaAs nanowires. Photoluminescence measurements on single core shell nanowires indicated variations in the shell composition, and phase segregation was confirmed by cross-sectional scanning transmission electron microscopy on 30 nm thin slices of the wires. It was discovered that Al-rich domains form in the < 112 > directions where two {110} shell facets meet during growth. We propose that the mechanism behind this phase segregation is a variation in the chemical potential along the circumference of the nanowire together with a difference in diffusion lengths for the different growth species. From the morphology of the core and the shell, we conclude that the side facet growth is temperature dependent forming {112} facets at low growth temperature and {110} facets at high growth temperature.

引用

页码：2743 / 2747

页数：5

共 23 条

[1] An empirical potential approach to wurtzite-zinc-blende polytypism in group III-V semiconductor nanowires [J].