Ballistic electron magnetic microscopy studies of magnetization reversal in Co/Cu/Co trilayer films

被引：12

作者：

Rippard, WH ^{[1
]}

Buhrman, RA ^{[1
]}

机构：

[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.372747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used ballistic electron magnetic microscopy to image, with nanometer resolution, the magnetization behavior of Co/Cu/Co trilayer films in the presence of a magnetic field. Films prepared both by thermal evaporation and by magnetron sputtering have been studied. In each case we have observed both large, similar to 500 nm, domain structures, and much smaller, apparently randomly dispersed, regions of magnetic misalignment between the Co layers that persist to fields > 100 Oe. We find the details of the ballistic electron transport through the films to be different on small length scales, similar to 50 nm, for the two types of growth methods. (C) 2000 American Institute of Physics. [S0021-8979(00)80508-3].

引用

页码：6490 / 6492

页数：3

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