Tip-gating effect in scanning impedance microscopy of nanoelectronic devices

被引：30

作者：

Kalinin, SV

Bonnell, DA

Freitag, M

Johnson, AT

机构：

[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

[2] Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA

[3] Univ Penn, Res Struct Matter Lab, Philadelphia, PA 19104 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 27期

关键词：

D O I：

10.1063/1.1531833

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electronic transport in semiconducting single-walled carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and noninvasive modes. High-resolution imaging of the defects is achieved when the probe acts as a local gate and simultaneously as an electrostatic probe of local potential. A class of weak defects becomes observable even if they are located in the vicinity of strong defects. The imaging mechanism of tip-gating scanning impedance microscopy is discussed. (C) 2002 American Institute of Physics. [DOI: 10.1063/.1.1531833].

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页码：5219 / 5221

页数：3

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