Structural and electronic characterization of a dissociated 60° dislocation in GeSi

A dissociated 60 degrees misfit dislocation at the substrate interface of a Si/GexSi(1 - x) heterojunction has been examined using electron energy loss spectroscopy and annular dark field imaging. New spectra are obtained at the intrinsic stocking fault, at the dislocation cores, and in the strained regions on either side of the stacking fault. In-gap states are verified at the partial dislocation cores. Images resemble accepted structures except at the 90 degrees partial dislocation. Model structures for the object are considered to try to reconcile the imaging and spectral results.