Comparison on the effect of (La0.5Sr0.5)MnO3 and (La0.5Sr0.5)CoO3 buffer layers on fatigue properties of (Pb0.6Sr0.4)TiO3 thin films prepared by pulsed laser deposition

被引：15

作者：

Cheng, HF ^{[1
]}

Chen, YC

Chou, CC

Chang, KC

Hou, CS

Lin, IN

机构：

[1] Natl Taiwan Normal Univ, Dept Phys, Taipei 117, Taiwan

[2] Natl Taiwan Univ Sci & Technol, Dept Mech Engn, Taipei 106, Taiwan

[3] Natl Tsing Hua Univ, Ctr Mat Sci, Hsinchu 300, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 12期

关键词：

D O I：

10.1063/1.373598

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fatigue properties of (Pb0.6Sr0.4)TiO3 (PSrTO) thin films deposited using (La0.5Sr0.5)MnO3 (LSMO) materials as buffer layer were compared with those of the films grown using (La0.5Sr0.5)CoO3 (LSCO) materials as buffer layer. The extent of degradation induced by polarization switching for 1x10(10) cycles with 210 kV/cm maximum field, which is four times of coercive field (E-c), is less pronounced for PSrTO/LSMO/Pt(Si) thin films than that for PSrTO/LSCO/Pt(Si) films. This phenomenon is ascribed to the smaller strain induced in PSrTO/LSMO/Pt(Si) materials. Moreover, the pulse response testing indicates that the degradation of the films mainly occurs at PSrTO-to-LSMO (or PSrTO-to-LSCO) interface. (C) 2000 American Institute of Physics. [S0021-8979(00)04712-5].

引用

页码：8695 / 8699

页数：5

共 16 条

[1] SPECTROSCOPIC CHARACTERISTICS OF PB0.95LA0.05(ZR1-YTIY)(0.9875)O-3 PLASMA AND GROWTH-BEHAVIOR OF THIN-FILMS BY PULSED-LASER DEPOSITION [J].

CHENG, HF .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (07) :4633-4639

[2] Influence of Pt, RuO2 and SrRuO3 intermediate layers on characteristics of (Sr0.5Ba0.5)Nb2O6 thin films [J].

Cheng, HF ;

Hu, CT ;

Lin, IN .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (1A) :284-288

[3] FERROELECTRIC MEMORIES [J].

DEARAUJO, CAP ;

MCMILLAN, LD ;

MELNICK, BM ;

CUCHIARO, JD ;

SCOTT, JF .

FERROELECTRICS, 1990, 104 :241-256

[4] FERROELECTRIC THIN-FILMS FOR ELECTRONIC APPLICATIONS [J].

HAERTLING, GH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :414-420

[5] SrRuO3 thin films grown under reduced oxygen pressure [J].

Hiratani, M ;

Okazaki, C ;

Imagawa, K ;

Takagi, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (12A) :6212-6216

[6] STRUCTURAL AND ELECTRICAL-PROPERTIES OF BA0.5SR0.5TIO3 THIN-FILMS WITH CONDUCTIVE SRRUO3 BOTTOM ELECTRODES [J].

JIA, QX ;

WU, XD ;

FOLTYN, SR ;

TIWARI, P .

APPLIED PHYSICS LETTERS, 1995, 66 (17) :2197-2199

[7] Improvement of (Pb1-xLax)(ZryTi1-y)1-x/4O3 ferroelectric thin films by use of SrRuO3/Ru/Pt/Ti bottom electrodes [J].

Liu, KS ;

Tseng, TF ;

Lin, IN .

APPLIED PHYSICS LETTERS, 1998, 72 (10) :1182-1184

[8] ELECTRICAL CHARACTERISTICS OF FERROELECTRIC PZT THIN-FILMS FOR DRAM APPLICATIONS [J].

MOAZZAMI, R ;

HU, CM ;

SHEPHERD, WH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) :2044-2049

[9] EPITAXIAL FERROELECTRIC THIN-FILMS FOR MEMORY APPLICATIONS [J].

RAMESH, R ;

SANDS, T ;

KERAMIDAS, VG ;

FORK, DK .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 22 (2-3) :283-289

[10] FATIGUE AND RETENTION IN FERROELECTRIC Y-BA-CU-O/PB-ZR-TI-O/Y-BA-CU-O HETEROSTRUCTURES [J].

RAMESH, R ;

CHAN, WK ;

WILKENS, B ;

GILCHRIST, H ;

SANDS, T ;

TARASCON, JM ;

KERAMIDAS, VG ;

FORK, DK ;

LEE, J ;

SAFARI, A .

APPLIED PHYSICS LETTERS, 1992, 61 (13) :1537-1539

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