Improvement of (Pb1-xLax)(ZryTi1-y)1-x/4O3 ferroelectric thin films by use of SrRuO3/Ru/Pt/Ti bottom electrodes

被引：51

作者：

Liu, KS ^{[1
]}

Tseng, TF

Lin, IN

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Ctr Mat Sci, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 10期

关键词：

D O I：

10.1063/1.121007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work deposits (Pb1-xLax)(ZryTi1-y)(1-x/4)O-3 (PLZT) thin films, possessing good ferroelectric properties (P-r = 14.4 mu C/cm(2)), on Pt/Ti/SiO2/Si substrates, using SrRuO3 perovskite as bottom electrodes. Precoating a metallic Ru layer on Pt/Ti/SiO2/Si substrates prior to depositing SrRuO3 bottom electrode further improves the film electrical properties. The optimum ferroelectric properties achieved are P-r = 25.6 mu C/cm(2), E-c = 47.1 kV/cm, and epsilon(r) = 1204. Analyzing the elemental depth profiles using secondary ions mass spectroscopy reveals that the presence of the metallic Ru layer effectively suppresses the outward diffusion of Ti and Si species. The interdiffusion between the SrRuO3 layer and the subsequently deposited PLZT is also substantially reduced, an effect that is presumed to be the primary factor in improving ferroelectric properties for PLZT thin films. (C) 1998 American Institute of Physics. [S0003-6951(98)00110-7].

引用

页码：1182 / 1184

页数：3

共 14 条

[1] COMPARISON OF LEAD-ZIRCONATE-TITANATE THIN-FILMS ON RUTHENIUM OXIDE AND PLATINUM-ELECTRODES [J].

BURSILL, LA ;

REANEY, IM ;

VIJAY, DP ;

DESU, SB .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) :1521-1525

[2] FERROELECTRIC MEMORIES [J].

DEARAUJO, CAP ;

MCMILLAN, LD ;

MELNICK, BM ;

CUCHIARO, JD ;

SCOTT, JF .

FERROELECTRICS, 1990, 104 :241-256

[3] FABRICATION AND PROPERTIES OF EPITAXIAL FERROELECTRIC HETEROSTRUCTURES WITH (SRRUO3) ISOTROPIC METALLIC OXIDE ELECTRODES [J].

EOM, CB ;

VANDOVER, RB ;

PHILLIPS, JM ;

WERDER, DJ ;

MARSHALL, JH ;

CHEN, CH ;

CAVA, RJ ;

FLEMING, RM ;

FORK, DK .

APPLIED PHYSICS LETTERS, 1993, 63 (18) :2570-2572

[4] FERROELECTRIC THIN-FILMS FOR ELECTRONIC APPLICATIONS [J].

HAERTLING, GH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :414-420

[5] ELECTRONIC BAND-STRUCTURE OF LANIO3 [J].

HAMADA, N .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1993, 54 (10) :1157-1160

[6]

JIA OX, 1997, PHILOS MAG B, V75, P261

[7] ELECTRICAL CHARACTERISTICS OF FERROELECTRIC PZT THIN-FILMS FOR DRAM APPLICATIONS [J].

MOAZZAMI, R ;

HU, CM ;

SHEPHERD, WH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) :2044-2049

[8] EPITAXIAL FERROELECTRIC THIN-FILMS FOR MEMORY APPLICATIONS [J].

RAMESH, R ;

SANDS, T ;

KERAMIDAS, VG ;

FORK, DK .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 22 (2-3) :283-289

[9] FATIGUE AND RETENTION IN FERROELECTRIC Y-BA-CU-O/PB-ZR-TI-O/Y-BA-CU-O HETEROSTRUCTURES [J].

RAMESH, R ;

CHAN, WK ;

WILKENS, B ;

GILCHRIST, H ;

SANDS, T ;

TARASCON, JM ;

KERAMIDAS, VG ;

FORK, DK ;

LEE, J ;

SAFARI, A .

APPLIED PHYSICS LETTERS, 1992, 61 (13) :1537-1539

[10] FERROELECTRIC LA-SR-CO-O/PB-ZR-TI-O/LA-SR-CO-O HETEROSTRUCTURES ON SILICON VIA TEMPLATE GROWTH [J].

RAMESH, R ;

GILCHRIST, H ;

SANDS, T ;

KERAMIDAS, VG ;

HAAKENAASEN, R ;

FORK, DK .

APPLIED PHYSICS LETTERS, 1993, 63 (26) :3592-3594

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