Tunneling magnetoresistance of MnAs thin film/GaAs/AlAs/GaAs:MnAs nanoclusters and its AlAs barrier thickness dependence

被引：18

作者：

Hai, Pham Nam ^{[1
]}

Yokoyama, Masafumi

Ohya, Shinobu

Tanaka, Masaaki

机构：

[1] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Japan Sci & Technol Agcy, Kawaguchi, Saitama, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 24期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2405399

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have investigated tunneling magnetoresistance (TMR) of magnetic tunnel junctions (MTJs) consisting of MnAs thin film (20 nm)/GaAs(1 nm)/AlAs(d=2-5 nm)/GaAs:MnAs nanoclusters (10 nm). The GaAs:MnAs material contains ferromagnetic MnAs nanoclusters in a GaAs matrix and acts as a spin injector and a spin detector. They observed an oscillatory behavior of the TMR ratio with the increasing AlAs barrier thickness, which can be explained by the quantum interference of two X-valley related wave functions in the AlAs barrier. (c) 2006 American Institute of Physics.

引用

页数：3

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