In situ studies of semiconductor nanowire growth using optical reflectometry

被引：34

作者：

Clement, T.

Ingole, S.

Ketharanathan, S.

Drucker, Jeff

Picraux, S. T.

机构：

[1] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA

[2] Arizona State Univ, Dept Chem & Mat Engn, Tempe, AZ 85287 USA

[3] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 16期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2364121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report the use of in situ optical reflectometry to determine the incubation time for the onset of growth, mean growth rate, and average length of Si nanowires during chemical vapor deposition vapor-liquid-solid synthesis. Results for the constructive and destructive interferences of 635 nm linearly polarized laser light scattering from growing nanowire layers are compared to simulations. This real time optical reflectance approach is shown to quantitatively determine nanowire growth rates as well as reveal a pressure dependence for the time to nucleate nanowire growth.

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页数：3

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