Simple route to ultra long SIC nanowires

被引：27

作者：

Cai, K. F. ^{[1
]}

Lei, Q. ^{[1
]}

Zhang, A. X. ^{[1
]}

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2007年 / 7卷 / 02期

关键词：

SiC nanowires; nanostructures; hexamethyldisilane; pyrolysis; crystal growth;

D O I：

10.1166/jnn.2007.143

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

SiC nanowires are prepared by pyrolysis of hexamethyldisilane (HMDS), at 1200 degrees C in a flowing Ar atmosphere. The length of the nanowires is in millimeter scale. Transmission electron microscopy observations indicate that the diameters of the SiC nanowires are in the range of about 8 to 120 nm, and that most of the nanowires have numerous stacking faults. The formation mechanism of the nanowires is proposed.

引用

页码：580 / 583

页数：4

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