Molecular beam epitaxial growth and characterization of non-tapered InN nanowires on Si(111)

被引：79

作者：

Chang, Yi-Lu ^{[1
]}

Li, Feng ^{[1
]}

Fatehi, Arya ^{[1
]}

Mi, Zetian ^{[1
]}

机构：

[1] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 34期

基金：

加拿大自然科学与工程研究理事会;

关键词：

INDIUM NITRIDE NANOWIRES; FUNDAMENTAL-BAND GAP; BUFFER LAYERS; MBE;

D O I：

10.1088/0957-4484/20/34/345203

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have performed a detailed investigation of the molecular beam epitaxial growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. By employing an in situ deposited thin (similar to 0.5 nm) In seeding layer prior to growth initiation, we have achieved, for the first time, non-tapered epitaxial InN nanowires, which exhibit record narrow spectral linewidths of 14 and 40 meV at 5 K and 300 K, respectively. Detailed studies confirm that the wires are nearly free of dislocations and stacking faults. The achievement of non-tapered, nearly homogeneous InN nanowires also enables, for the first time, the derivation of the band gap of InN directly from PL spectroscopy in the temperature range of 5-300 K.

引用

页数：6

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