Capacitance-voltage curve recovery of MOS capacitors passivated with BaF2-BeF2-SiO2-B2O3-P2O5 glasses

被引:5
作者
Kobayashi, K
机构
[1] Toshiba ULSI Research Center, Kawasaki
关键词
D O I
10.1039/a602563c
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The capacitance-voltage (C-V) characteristics of metal-oxide-silicon (MOS) capacitors passivated by bubbled BaF2-BeF2-SiO2-B2O3-P2O5 glasses with various water and fluoride contents have been investigated. As the absorption coefficients of OH- ions increased, adverse effects on the recovery of hysteresis loops of the C-V curves and their shifts were observed. The water content is related closely to the fluoride content in these glasses. A bubbling technique for blowing dry air through the molten glass during melting was effective for the removal of OH- ions in the fluoride-containing glasses.
引用
收藏
页码:127 / 129
页数:3
相关论文
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