Experimental determination of quantum dipoles at semiconductor heterojunctions prepared by van der Waals epitaxy: Linear correction term for the electron affinity rule

被引:22
作者
Schlaf, R
Lang, O
Pettenkofer, C
Jaegermann, W
Armstrong, NR
机构
[1] HAHN MEITNER INST BERLIN GMBH, BEREICH CG, D-14109 BERLIN, GERMANY
[2] UNIV ARIZONA, DEPT CHEM, TUCSON, AZ 85721 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1997年 / 15卷 / 03期
关键词
D O I
10.1116/1.580543
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We determined the band offset of eight layered heterocontacts consisting of combinations between SnS2, SnSe2, WSe2, MoS2, MoTe2, InSe, and GaSe. The comparison of offsets predicted by the electron affinity rule (EAR) revealed a systematic deviation. Due to the absence of structural dipoles in layered materials, this deviation corresponds to the magnitude of the quantum dipoles at the interface which allows the development of a quantum dipole correction term for the EAR. The corrected EAR is still a linear rule. The error margin of the corrected EAR lies well within the experimental error of photoemission spectroscopy experiments, thus proving the general applicability of Linear rules for the determination of the band offset. (C) 1997 American Vacuum Society.
引用
收藏
页码:1365 / 1370
页数:6
相关论文
共 30 条
[1]   EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&
[2]   BAND OFFSETS IN TETRAHEDRAL SEMICONDUCTORS [J].
CARDONA, M ;
CHRISTENSEN, NE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1285-1289
[3]   DIPOLE EFFECTS AND BAND OFFSETS AT SEMICONDUCTOR INTERFACES [J].
CHRISTENSEN, NE .
PHYSICAL REVIEW B, 1988, 37 (09) :4528-4538
[4]   ELEMENTARY THEORY OF HETEROJUNCTIONS [J].
HARRISON, WA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :1016-1021
[5]   TIGHT-BINDING THEORY OF HETEROJUNCTION BAND LINEUPS AND INTERFACE DIPOLES [J].
HARRISON, WA ;
TERSOFF, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1068-1073
[6]  
HARRISON WA, 1980, ELECTRONIC STRUCTURE
[7]   SEMICONDUCTOR INTERFACE STUDIES USING CORE AND VALENCE LEVEL PHOTOEMISSION [J].
HORN, K .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 51 (04) :289-304
[8]   INTERFACIAL PROPERTIES OF SEMICONDUCTING TRANSITION-METAL CHALCOGENIDES [J].
JAEGERMANN, W ;
TRIBUTSCH, H .
PROGRESS IN SURFACE SCIENCE, 1988, 29 (1-2) :1-167
[9]  
JAEGERMANN W, 1996, UNPUB P 23 ICPS BERL
[10]  
JAEGERMANN W, 1992, PHOTOELECTROCHEMISTR