Quantum dot formation by segregation enhanced CdSe reorganization

被引：53

作者：

Passow, T

Leonardi, K

Heinke, H

Hommel, D

Litvinov, D

Rosenauer, A

Gerthsen, D

Seufert, J

Bacher, G

Forchel, A

机构：

[1] Univ Bremen, Inst Festkorperphys, D-28334 Bremen, Germany

[2] Univ Karlsruhe, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany

[3] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 11期

关键词：

D O I：

10.1063/1.1516248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of the growth conditions during capping of CdSe/ZnSe quantum structures grown on GaAs(001) by molecular-beam epitaxy (MBE) were systematically investigated by high-resolution x-ray diffraction, transmission electron microscopy, and temperature dependent, partly time-resolved photoluminescence spectroscopy. The results clearly indicate formation of quantum wells with potential fluctuations if conventional MBE is used for capping the CdSe by ZnSe. In contrast, quantum dot formation occurs using migration enhanced epitaxy for this growth step. In the latter case, quantum dots can be obtained without formation of stacking faults. (C) 2002 American Institute of Physics.

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页码：6546 / 6552

页数：7

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