Combinatorial screening of the effect of temperature on the microstructure and mobility of a high performance polythiophene semiconductor

被引:26
作者
Lucas, Leah A.
DeLongchamp, Dean M. [1 ]
Vogel, Brandon M.
Lin, Eric K.
Fasolka, Michael J.
Fischer, Daniel A.
McCulloch, Iain
Heeney, Martin
Jabbour, Ghassan E.
机构
[1] NIST, Div Polymers, Gaithersburg, MD 20899 USA
[2] Arizona State Univ, Dept Chem & Mat Engn, Tempe, AZ 85284 USA
[3] Arizona State Univ, Flexible Display Ctr, Tempe, AZ 85284 USA
[4] Merck Chem, Southampton S016 7QD, Hants, England
[5] Arizona State Univ, Dept Chem & Mat Engn, Tempe, AZ 85284 USA
[6] Arizona State Univ, Flexible Display Ctr, Tempe, AZ 85284 USA
关键词
D O I
10.1063/1.2404934
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using a gradient combinatorial approach, the authors report the effects of temperature on the microstructure and hole mobility of poly(2,5-bis(3-dodecylthiophen-2yl)thieno[3,2-b]thiophene) thin films for application in organic field-effect transistors. The gradient heating revealed a detailed dependence on thermal history. Optimal heat treatment achieved mobilities as high as 0.3 cm(2) V-1 s(-1). Mobility enhancement coincides with an increase in crystal domain size and orientation, all of which occur abruptly at a temperature closely corresponding to a bulk liquid crystal phase transition.
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页数:3
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