Spin-flip Raman scattering in Mn-doped GaAs:: exchange interaction and g factor renormalization

被引：13

作者：

Sapega, VF ^{[1
]}

Ruf, T ^{[1
]}

Cardona, M ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 114卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

semiconductors; crystal and ligand fields; electronic states (localized); optical properties; inelastic light scattering;

D O I：

10.1016/S0038-1098(00)00109-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We discuss exchange interaction in neutral accepters (A(0)) and acceptor-bound excitons (A(0)X) in Mn-doped GaAs. We have measured, by means of spin-flip Raman scattering, the constant of antiferromagnetic exchange between valence band holes and electrons in the Mn 3d(5) shell, the g-factor of electrons in the inner Mn shell, and the g-factor of the A(0) center. The strong coupling of 3d(5) Mn core electrons with conduction electrons leads to a temperature and magnetic-field dependent g-factor renormalization, and intense multi-spin-flip Raman scattering occurs. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：573 / 577

页数：5

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