Growth and ferroelectric properties of strontium bismuth tantalite thin films using pulsed laser deposition combined with an annealing process

被引：21

作者：

Yang, PX ^{[1
]}

Zhou, NS ^{[1
]}

Zheng, LR ^{[1
]}

Lu, HX ^{[1
]}

Lin, CL ^{[1
]}

机构：

[1] NANJING UNIV,NATL LAB SOLID STATE MICROSTRUCT,NANJING 210008,PEOPLES R CHINA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1997年 / 30卷 / 04期

关键词：

D O I：

10.1088/0022-3727/30/4/005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric strontium bismuth tantalite (SBT) thin films were fabricated on Pt/Ti/SiO2/Si substrates using pulsed laser deposition combined with an annealing process. The crystallization and ferroelectric properties were clearly dependent on the annealing conditions. SBT thin films with good crystallization and ferroelectric properties were obtained after annealing at 700 degrees C for 90 min. The films showed high (115) and (008) diffraction peaks, Good ferroelectric properties were obtained from the films; remnant polarization and coercive field were about 10 mu C cm(-2) and 57 kV cm(-1), respectively. No fatigue was observed up to 10(10) switching cycles. The dc leakage current was about 4 x 10(-8) A cm(-2) and the dc breakdown field was 250 kV cm(-1).

引用

页码：527 / 532

页数：6

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