Nitrogen-induced levels in GaAs1-xNx studied with resonant Raman scattering

被引：65

作者：

Cheong, HM ^{[1
]}

Zhang, Y ^{[1
]}

Mascarenhas, A ^{[1
]}

Geisz, JF ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.61.13687

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Resonant Raman scattering is used to study the nature of the recently discovered nitrogen-induced level E+ located in the conduction band of GaAs1-xNx (0.001 less than or equal to x less than or equal to 0.022). Our data demonstrate that the E+ state is derived from the nitrogen-induced T-L mixing of the bulk GaAs states;and that it is no an isolated nitrogen impurity level. A broadening of the GaAs-like longitudinal-optical phonon-line and an enhancement of the transverse-optical phonon line is observed near resonance, which is interpreted as being due to resonance with strongly localized states.

引用

页码：13687 / 13690

页数：4

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