Effect of composition on thermal stability and electrical resistivity of Ta-Si-N films

被引：44

作者：

Olowolafe, JO ^{[1
]}

Rau, I

Unruh, KM

Swann, CP

Jawad, ZS

Alford, T

机构：

[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA

[2] Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA

[3] Arizona State Univ, Dept Chem Bio & Mat Engn, Tempe, AZ 85287 USA

来源：

THIN SOLID FILMS | 2000年 / 365卷 / 01期

关键词：

Ta-Si-N; thermal stability; sputtering; structural properties;

D O I：

10.1016/S0040-6090(99)01113-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The role of composition on the resistivity and thermal stability of sputtered Ta-Si-N films have been studied using X-ray diffraction, Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio. While Ta0.28Si0.07N0.65 starts to crystallize at about 900 degrees C, Ta0.24Si0.10N0.66 and Ta0.24Si0.12N0.64 were thermal for heat treatment below 1100 degrees C. In-situ sheet resistance measurement also showed that the sheet resistance for the alloys varies with composition and decreases with temperature. Our results indicate that Ta-Si-N films would find other applications in semiconductor devices, beside being used as a diffusion barrier. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：19 / 21

页数：3

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