Band-Edge High-Performance Metal-Gate/High-κ nMOSFET Using Hf-Si/HfO2 Stack

被引：2

作者：

Ando, Takashi ^{[1
,2
]}

Hirano, Tomoyuki ^{[3
]}

Tai, Kaori ^{[3
]}

Yamaguchi, Shinpei ^{[3
]}

Yoshida, Shinichi ^{[3
]}

Iwamoto, Hayato ^{[3
]}

Kadomura, Shingo ^{[3
]}

Watanabe, Heiji ^{[1
]}

机构：

[1] Osaka Univ, Dept Mat & Life Sci, Grad Sch Engn, Suita, Osaka 5650871, Japan

[2] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[3] Sony Corp, Semicond Technol Dev Div, Consumer Prod & Device Grp, Atsugi, Kanagawa 2430014, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 12期

关键词：

Gate-last process; hafnium oxide; hafnium silicide; high-kappa dielectric; metal gate; ELECTRON-MOBILITY; REMOTE PHONON; LOW-POWER; LAYERS;

D O I：

10.1109/TED.2009.2030432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A record high electron mobility (248 cm(2)/V . s at E-eff of 1 MV/cm) was obtained at T-inv of 1.47 nm, with a bandedge effective work function, by a Hf-Si/HfO2 stack using gatelast process, resulting in I-ON of 1178 mu A/mu m (I-OFF of 100 nA/mu m) at V-dd of 1.0 V for a 45-nm gate nMOSFET without strain-enhanced technology.

引用

页码：3223 / 3227

页数：5

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