Photoelectric and optical properties of pentacene films deposited on n-Si by thermal evaporation

被引：20

作者：

Kim, SS ^{[1
]}

Park, SP ^{[1
]}

Kim, JH ^{[1
]}

Im, S ^{[1
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Sudaemoon Ku, Seoul 120749, South Korea

来源：

THIN SOLID FILMS | 2002年 / 420卷

关键词：

photoelectric; ellipsometry; absorption; current leakage; pentacene film;

D O I：

10.1016/S0040-6090(02)00653-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical and photoelectric properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 60 and 80 degreesC are investigated. Ellipsometric spectra of the films deposited at room temperature and 60 degreesC exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoelectric effects were well observed from p-pentacene/ n-Si diodes, which showed a maximum photoresponsivity of 3.87 A/W under a monochromatic red light of 1.85 eV (670 nm) at 5 V reverse bias. All the diodes exhibited typical rectifying behavior but a higher dark current leakage level was observed from the p-pentacene/n-Si diodes prepared at a higher deposition temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：19 / 22

页数：4

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