Correlation between oligothiophene thin film transistor morphology and vapor responses

被引:102
作者
Torsi, L [1 ]
Lovinger, AJ
Crone, B
Someya, T
Dodabalapur, A
Katz, HE
Gelperin, A
机构
[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
[2] Univ Bari, Dipartmento Chim, Ctr Eccellenza TIRES, I-70126 Bari, Italy
关键词
D O I
10.1021/jp021473q
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Oligothiophene thin film transistors have recently been shown to respond to organic vapors, suggesting possible applicability in the field of olfactory sensor arrays. Here, we present a study of the correlation between the morphological structure of the active semiconductor thin film and the response to the vapor. The study was carried out by combining the measurement of the transient source-drain current of the transistor under vapor flow with the morphological characterization of the organic thin films by transmission electron microscopy.
引用
收藏
页码:12563 / 12568
页数:6
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