Development of new apparatus for field emission measurement

被引:7
作者
Lee, KY
Ryu, JT
Arimatsu, D
Kohara, H
Katayama, M
Wang, XG
Hirao, T
Oura, K
机构
[1] Osaka Univ, Fac Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan
[2] Taegu Univ, Dept Comp & Commun Engn, Kyungsan 712714, Kyungpook, South Korea
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 6A期
关键词
field emission profiler; amorphous carbon; current density distribution;
D O I
10.1143/JJAP.39.3596
中图分类号
O59 [应用物理学];
学科分类号
摘要
A field emission measurement profiler, which not only can measure the field emission of the entire film as well as its local points but also can present a two-dimensional map of the current density distribution, is developed. This apparatus is operated under an ultrahigh vacuum condition to measure the field emission distribution of amorphous carbon (a-C) films deposited by a RF magnetron sputtering system. The results show that the film surface consists of strong and weak emission sites. We also obtain the field emission maps of micrometer order from strong and weak emission sites; these can help us understand the mechanism of field emission for improving the procedure for growing films.
引用
收藏
页码:3596 / 3598
页数:3
相关论文
共 11 条
[1]   A simple and robust electron beam source from carbon nanotubes [J].
Collins, PG ;
Zettl, A .
APPLIED PHYSICS LETTERS, 1996, 69 (13) :1969-1971
[2]   Electron field emission of amorphous carbon films [J].
Hoffmann, U ;
Weber, A ;
Lohken, T ;
Klages, CP ;
Spaeth, C ;
Richter, F .
DIAMOND AND RELATED MATERIALS, 1998, 7 (2-5) :682-686
[3]   Diamond-based field-emission displays [J].
Jaskie, JE .
MRS BULLETIN, 1996, 21 (03) :59-64
[4]   Field emission properties of silicon carbide and diamond-like carbon (DLC) films made by chemical vapour deposition techniques [J].
Kleps, I ;
Nicolaescu, D ;
Stamatin, I ;
Correia, A ;
Gil, A ;
Zlatin, A .
APPLIED SURFACE SCIENCE, 1999, 146 (1-4) :152-157
[5]   Electron emission and structure properties of cesiated carbon films prepared by negative carbon ion beam [J].
Ko, YW ;
Kim, SI .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2631-2635
[6]   Electronic behaviour and field emission of a-C:H:N/Si heterojunctions [J].
Munindradasa, DAI ;
Chhowalla, M ;
Amaratunga, GAJ ;
Silva, SRP .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 :1106-1112
[7]   Characterization of electron emission from N-doped diamond using simultaneous field emission and photoemission technique [J].
Okano, K ;
Yamada, T ;
Sawabe, A ;
Koizumi, S ;
Matsuda, R ;
Bandis, C ;
Chang, W ;
Pate, BB .
APPLIED SURFACE SCIENCE, 1999, 146 (1-4) :274-279
[8]   Band model for electron emission from diamond-like carbon and diamond [J].
Robertson, J ;
Milne, W .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 :558-564
[9]  
WATAMORI M, 1909, P 4 INT S SPUTT PLAS, P197
[10]   Electron emission from disordered tetrahedral carbon [J].
Weiss, BL ;
Badzian, A ;
Pilione, L ;
Badzian, T ;
Drawl, W .
APPLIED PHYSICS LETTERS, 1997, 71 (06) :794-796