A white light phosphor suitable for near ultraviolet excitation

被引:62
作者
Sun, Xiaoyuan
Zhang, Jiahua
Zhang, Xia
Lu, Shaozhe
Wang, Xiaojun
机构
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Escited State Proc, Changchun 130033, Peoples R China
[2] Georgia So Univ, Dept Phys, Statesboro, GA 30460 USA
[3] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
基金
中国国家自然科学基金;
关键词
white light emitting; phosphor; white LED; EMITTING DIODE; BA3MGSI2O8-EU2+;
D O I
10.1016/j.jlumin.2006.01.336
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Luminescent properties of Eu2+-doped phosphors with nominal composition of 2SrO center dot MgO center dot xSiO(2) (0.8 <= x <= 1.2) are studied. The emission spectra consist of a blue band (460 nm) and a yellow band (550 nm), the relative intensities of which change with the SiO2 composition x. It is found that a combination of the blue and yellow bands can generate white light at x around 1 undernear- ultraviolet excitation. X-ray diffraction patterns of the phosphors demonstrate both Sr3MgSi2O8 and Sr2SiO4 phases, in which Eu2+ contributes to the blue and yellow emissions, respectively. The relative intensity variation of the two bands is attributed to the relative proportion of the two phases dependent on SiO2 composition. A white light emitting diode fabricated using a GaN chip (lambda(em) = 400 nm) and this phosphor is obtained. exhibiting color coordinates of x = 0.33, y = 0.34, color rendering index of 85 and luminous efficiency of 6 lm/W. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:955 / 957
页数:3
相关论文
共 7 条
  • [1] Energy of the first 4f7→4f65d transition of Eu2+ in inorganic compounds
    Dorenbos, P
    [J]. JOURNAL OF LUMINESCENCE, 2003, 104 (04) : 239 - 260
  • [2] White-light generation through ultraviolet-emitting diode and white-emitting phosphor
    Kim, JS
    Jeon, PE
    Park, YH
    Choi, JC
    Park, HL
    Kim, GC
    Kim, TW
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (17) : 3696 - 3698
  • [3] GaN-Based white-light-emitting diodes fabricated with a mixture of Ba3MgSi2O8:Eu2+ and Sr2SiO4:Eu2+ phosphors
    Kim, JS
    Kang, JY
    Jeon, PE
    Choi, JC
    Park, HL
    Kim, TW
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (03): : 989 - 992
  • [4] Warm-white-light emitting diode utilizing a single-phase full-color Ba3MgSi2O8:Eu2+, Mn2+ phosphor
    Kim, JS
    Jeon, PE
    Choi, JC
    Park, HL
    Mho, SI
    Kim, GC
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (15) : 2931 - 2933
  • [5] n-UV plus blue/green/red white light emitting diode lamps
    Kuo, CH
    Sheu, JK
    Chang, SJ
    Su, YK
    Wu, LW
    Tsai, JM
    Liu, CH
    Wu, RK
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (4B): : 2284 - 2287
  • [6] White light-emitting diodes of GaN-based Sr2SiO4:Eu and the luminescent properties
    Park, JK
    Lim, MA
    Kim, CH
    Park, HD
    Park, JT
    Choi, SY
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (05) : 683 - 685
  • [7] Sun Xiao-yuan, 2005, Chinese Journal of Luminescence, V26, P404