Control of carrier concentration in thin cuprous oxide Cu2O films by atomic hydrogen

被引：27

作者：

Tabuchi, N ^{[1
]}

Matsumura, H ^{[1
]}

机构：

[1] JAIST, Tatsunokuchi, Ishikawa 92312, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 08期

关键词：

Cu2O; Cat-CVD; atomic hydrogen; carrier concentration; mobility;

D O I：

10.1143/JJAP.41.5060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A stable cuprous oxide Cu2O film is prepared by low-temperature oxidation of a sputtered copper (Cu) thin film at 300degreesC. Although the carrier concentration in Cu2O is determined by the excessive oxygen (0) concentration, the concentration of such O atoms is controlled by the exposure to atomic hydrogen (H) generated by the catalytic reaction between the heated tungsten catalyst and H-2 gas. By this method, the carrier concentration in a 100-nm-thick Cu2O film is decreased from I X 10(16) cm(-3) to 2 x 10(15) cm(-3) and the Hall effect mobility is increased from 5.6 cm(2)/Vs to 28.9 cm(2)/Vs. Atomic H exposure is a useful tool for improving the properties Of (CuO)-O-2.

引用

页码：5060 / 5063

页数：4

共 10 条

[1] Oxidation behaviour of Cu thin films on Si wafer at 175-400°C [J].