Optical gain of InGaAsN/InP quantum wells for laser applications

被引:26
作者
Carrere, H. [1 ]
Marie, X. [1 ]
Lombez, L. [1 ]
Amand, T. [1 ]
机构
[1] INSA, Lab Nanophys Magnetisme & Optoelect, F-31077 Toulouse 4, France
关键词
D O I
10.1063/1.2372769
中图分类号
O59 [应用物理学];
学科分类号
摘要
Dilute nitride structures offer the possibility of growing tensile-strained quantum well lasers on InP substrate emitting in the telecommunication L band. The authors have calculated the characteristics of InGaAs(N)/InAsP/InP quantum well structures and compared to the ones of N-free quantum well structures. It appears that the introduction of a fraction of nitrogen as small as 0.3% is enough to pass over the emission wavelength of 1.57 mu m and induces an increase of the material gain by a factor 3. (c) 2006 American Institute of Physics.
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页数:3
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