Optical gain of InGaAsN/InP quantum wells for laser applications

被引：26

作者：

Carrere, H. ^{[1
]}

Marie, X. ^{[1
]}

Lombez, L. ^{[1
]}

Amand, T. ^{[1
]}

机构：

[1] INSA, Lab Nanophys Magnetisme & Optoelect, F-31077 Toulouse 4, France

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 18期

关键词：

D O I：

10.1063/1.2372769

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dilute nitride structures offer the possibility of growing tensile-strained quantum well lasers on InP substrate emitting in the telecommunication L band. The authors have calculated the characteristics of InGaAs(N)/InAsP/InP quantum well structures and compared to the ones of N-free quantum well structures. It appears that the introduction of a fraction of nitrogen as small as 0.3% is enough to pass over the emission wavelength of 1.57 mu m and induces an increase of the material gain by a factor 3. (c) 2006 American Institute of Physics.

引用

页数：3

共 29 条

[1] OPTICAL GAIN AND GAIN SUPPRESSION OF QUANTUM-WELL LASERS WITH VALENCE BAND MIXING [J].

AHN, D ;

CHUANG, SL .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (01) :13-24

[2] INDUCED ELECTROSTATIC CONFINEMENT OF THE ELECTRON-GAS IN TENSILE STRAINED INGAAS/INGAASP QUANTUM-WELL LASERS [J].

BARRAU, J ;

AMAND, T ;

BROUSSEAU, M ;

SIMES, RJ ;

GOLDSTEIN, L .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (12) :5768-5771

[3] Band gaps of lattice-matched (Ga,In)(As,N) alloys [J].

Bellaiche, L .

APPLIED PHYSICS LETTERS, 1999, 75 (17) :2578-2580

[4] Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures [J].

Buyanova, IA ;

Chen, WM ;

Monemar, B ;

Xin, HP ;

Tu, CW .

APPLIED PHYSICS LETTERS, 1999, 75 (24) :3781-3783

[5] Intervalence band absorption in semiconductor laser materials [J].

Childs, GN ;

Brand, S ;

Abram, RA .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (02) :116-120

[6]

EPENGA R, 1987, PHYS REV B, V36, P1554

[7] Photo-induced transient spectroscopy of defect levels in GaInNAs [J].

Erol, A ;

Mazzucato, S ;

Arikan, MÇ ;

Carrère, H ;

Arnoult, A ;

Bedel, E ;

Balkan, N .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (11) :968-972

[8] Growth and characterization of small band gap (∼0.6 eV) InGaAsN layers on InP [J].

Gokhale, MR ;

Wei, J ;

Wang, HS ;

Forrest, SR .

APPLIED PHYSICS LETTERS, 1999, 74 (09) :1287-1289

[9] Comparison of the band alignment of strained and strain-compensated GaInNAs QWs on GaAs and InP substrates [J].

Gönül, B ;

Köksal, K ;

Bakir, E .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 31 (02) :148-154

[10] Compositional variations in strain-compensated InGaAsP InAsP superlattices studied by scanning tunneling microscopy [J].

Grandidier, B ;

Feenstra, RM ;

Silfvenius, C ;

Landgren, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1999, 17 (04) :2251-2256

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