Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

被引：6

作者：

Brillson, LJ ^{[1
]}

Young, AP

White, BD

Schäfer, J

Niimi, H

Lee, YM

Lucovsky, G

机构：

[1] Ohio State Univ, Columbus, OH 43210 USA

[2] N Carolina State Univ, Raleigh, NC 27695 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.591463

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-energy electron-excited nanoluminescence spectroscopy reveals depth-resolved optical emission associated with traps near the interface between ultrathin SiO2 deposited by plasma-enhanced chemical vapor deposition on plasma-oxidized crystalline Si. These near-interface states exhibit a strong dependence on local chemical bonding changes introduced by thermal/gas prodessing, layer-specific nitridation, or depth-dependent radiation exposure. The depth-dependent results provide a means to test chemical and structural bond models used to develop advanced dielectric-scmiconductor junctions. (C) 2000 American Vacuum Society.

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收藏

页码：1737 / 1741

页数：5

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