Bonding and hardness in nonhydrogenated carbon films with moderate sp3 content

被引：45

作者：

Gago, R

Jiménez, I

Albella, JM

Climent-Font, A

Cáceres, D

Vergara, I

Banks, JC

Doyle, BL

Terminello, LJ

机构：

[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

[2] Univ Autonoma Madrid, Dept Fis Aplicada C12, E-28049 Madrid, Spain

[3] Univ Carlos III Madrid, Dept Fis Aplicada, Leganes 28911, Spain

[4] Sandia Natl Labs, Radiat Solid Interact & Proc, Albuquerque, NM 87185 USA

[5] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

[6] Stanford Synchrotron Radiat Lab, Stanford, CA 94309 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 11期

关键词：

D O I：

10.1063/1.373514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous carbon films with an sp(3) content up to 25% and a negligible amount of hydrogen have been grown by evaporation of graphite with concurrent Ar+ ion bombardment. The sp(3) content is maximized for Ar+ energies between 200 and 300 eV following a subplantation mechanism. Higher ion energies deteriorate the film due to sputtering and heating processes. The hardness of the films increases in the optimal assisting range from 8 to 18 GPa, and is explained by crosslinking of graphitic planes through sp(3) connecting sites. (C) 2000 American Institute of Physics. [S0021-8979(00)08911-8].

引用

页码：8174 / 8180

页数：7

共 47 条

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