Characterization of high-quality a-SiC:H films prepared by hydrogen-radical CVD method

被引：9

作者：

Andoh, N

Nagayoshi, H

Kanbashi, T

Kamisako, K

机构：

[1] Faculty of Technology, Tokyo Univ. of Agric. and Technology, Koganei, Tokyo 184

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1997年 / 49卷 / 1-4期

关键词：

a-SiC:H; hydrogen-radical CVD; microwave discharge;

D O I：

10.1016/S0927-0248(97)00180-3

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

High-quality a-SiC:H films have been prepared by using a hydrogen-radical CVD method. Si2H6 and C2H2 were used as source gases, and C2H2 was introduced by decomposing with microwave plasma. Consequently, carbon content and optical band gap could be controlled well by C2H2 the flow rate. It was confirmed that very stable a-SiC:H films can be produced by this technique.

引用

页码：89 / 94

页数：6

共 5 条

[1] CHARACTERIZATION OF HYDROGENATED AMORPHOUS SILICON-CARBON FILMS DEPOSITED BY HYBRID-PLASMA CVD [J].