EFFECTS OF DEPOSITION CONDITIONS ON PROPERTIES OF A-SI1-XCX-H DIAGNOSED USING OPTICAL-EMISSION SPECTROSCOPY

被引：11

作者：

YOSHIMOTO, M

AIZAWA, K

FUYUKI, T

MATSUNAMI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 10期

关键词：

D O I：

10.1143/JJAP.25.1465

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1465 / 1469

页数：5

共 22 条

[1] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].

ANDERSON, DA ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :1-16

[2] REACTION-MECHANISMS IN PLASMA DEPOSITION OF SIXC1-X-H FILMS [J].

CATHERINE, Y ;

TURBAN, G ;

GROLLEAU, B .

THIN SOLID FILMS, 1981, 76 (01) :23-33

[3] BONDING IN HYDROGENATED HARD CARBON STUDIED BY OPTICAL SPECTROSCOPY [J].

DISCHLER, B ;

BUBENZER, A ;

KOIDL, P .

SOLID STATE COMMUNICATIONS, 1983, 48 (02) :105-108

[4] MOLECULAR DISSOCIATION BY ELECTRON-IMPACT - OPTICAL EMISSION FROM FRAGMENTS OF METHANE, ETHYLENE, AND METHANOL [J].

DONOHUE, DE ;

SCHIAVONE, JA ;

FREUND, RS .

JOURNAL OF CHEMICAL PHYSICS, 1977, 67 (02) :769-780

[5] GROWTH AND CHARACTERIZATION OF AMORPHOUS HYDROGENATED SILICON [J].

HIROSE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :275-281

[6]

HIROSE M, 1982, OYO BUTURI, V52, P675

[7] GROWTH OF CARBON-FILMS WITH RANDOM ATOMIC-STRUCTURE FROM ION IMPACT DAMAGE IN A HYDROCARBON PLASMA [J].

HOLLAND, L ;

OJHA, SM .

THIN SOLID FILMS, 1979, 58 (01) :107-116

[8] VISIBLE-LIGHT INJECTION-ELECTROLUMINESCENT A-SIC/P-I-N DIODE [J].

KRUANGAM, D ;

ENDO, T ;

WEI, GP ;

OKAMOTO, H ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (10) :L806-L808

[9]

MACTAGGART FK, 1967, PLASMA CHEM ELECTRIC, P108

[10] EVIDENCE FOR GRAPHITIC-TYPE BONDING IN GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON CARBON ALLOYS [J].

MAHAN, AH ;

VONROEDERN, B ;

WILLIAMSON, DL ;

MADAN, A .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2717-2720

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