Evaluation of THM-Grown CdZnTe Material for Large-Volume Gamma-Ray Detector Applications

被引：68

作者：

Amman, Mark ^{[1
]}

Lee, Julie S. ^{[1
]}

Luke, Paul N. ^{[1
]}

Chen, Henry ^{[2
]}

Awadalla, Salah A. ^{[2
]}

Redden, Robert ^{[2
]}

Bindley, Glenn ^{[2
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[2] Redlen Technol, Sidney, BC V8L 5Y8, Canada

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2009年 / 56卷 / 03期

关键词：

CdZnTe detectors; gamma-ray spectroscopy detectors; charge carrier lifetime; charge carrier mobility; CRYSTALS;

D O I：

10.1109/TNS.2008.2010402

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Over 25 1-cm(3) CdZnTe crystals produced using the Traveling Heater Method at Redlen Technologies have been characterized. The charge carrier mobility and lifetime, and charge carrier transport uniformity of each crystal were measured using alpha particles. Some of the crystals were made into coplanar-grid detectors and their performance characterized using 662 keV gamma rays. The average electron mobility-lifetime product for these crystals was found to be a factor of about five times greater than that measured from crystals obtained over the last decade from two other commercial crystal growers. The coplanar-grid detectors produced from the material typically achieved an energy resolution at 662 keV near 2% FWHM when operated at room temperature. This is comparable to the best coplanar-grid detectors commercially produced today.

引用

页码：795 / 799

页数：5

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