Flat-band voltage control of a back-gate MOSFET by single ion implantation

被引：8

作者：

Shinada, T

Ishikawa, A

Hinoshita, C

Koh, M

Ohdomari, I

机构：

[1] Waseda Univ, Sch Sci & Engn, Shinjuku Ku, Tokyo 16985555, Japan

[2] Waseda Univ, Kagami Mem Lab Mat Sci & Technol, Shinjuku Ku, Tokyo 1690051, Japan

来源：

APPLIED SURFACE SCIENCE | 2000年 / 162卷

基金：

日本学术振兴会;

关键词：

single ion implantation; focused ion beam; fluctuation; doping; impurity; dopant number;

D O I：

10.1016/S0169-4332(00)00239-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In order to control the electrical characteristics of semiconductor fine structures, several tens of single-dopant ions were implanted one by one into sub-micron semiconductor regions by means of single ion implantation (SII). The flat-band voltage of the implanted test samples (a back-gate MOSFET) were measured by the extrapolation of the linear part of substrate bias (V-BG)-drain current (I-D) characteristics to V-BG axis. The flat-band voltage decreased linearly with the number of implanted ions. The linear relationship between the flat-band voltage and the number of implanted ions verifies the controllability of device characteristics with the SII. The increase in the flat-band voltage per one dopant atom has been found to be -4.5 mV/ion in this study. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：499 / 503

页数：5

共 13 条

[11] Channel engineering for the reduction of random-dopant-placement-induced threshold voltage fluctuation [J].