Improved pattern-placement accuracy in E-beam lithography via sparse-sample spatial-phase locking

被引：7

作者：

Hastings, JT ^{[1
]}

Zhang, F ^{[1
]}

Goodberlet, JG ^{[1
]}

Smith, H ^{[1
]}

机构：

[1] MIT, Nanostruct Lab, Cambridge, MA 02139 USA

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 53卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(00)00334-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A sparse-sampling algorithm has been developed for two-dimensional, spatial-phase-locked electron-beam lithography (SPLEBL). This algorithm corrects for field shift, scale and rotation errors. The algorithm can be used with a scintillating polymeric global-fiducial grid distributed over the substrate. An experimental evaluation of the sparse-sampling algorithm indicates that sub-10-nm pattern-placement accuracy can be obtained with this mode of SPLEBL.

引用

页码：361 / 364

页数：4

共 5 条

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